Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/ dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
- 3Q technology for improved noise immunity
- High commutation capability with maximum false trigger immunity
- High junction operating temperature capability (Tj(max) = 150 °C)
- High voltage capability
- High current capability
- Less sensitive gate for highest noise immunity
- Internally insulated package
- Internally isolated mounting base
- Triggering in three quadrants only
- Very high immunity to false turn-on by dv/dt and IEC 61000-4-4 fast transient
- Package is RoHS compliant
- Package meets UL94V0 flammability requirement
- Package meets UL1557 isolation test requirement rated at 2500V RMS
- Heating controls
- High power motor control
- High power switching
- Applications subject to high temperature (Tj(max) = 150 °C)
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|---|
| BTA330Y-800CT | VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 86 °C | 30 | A | |||
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms | 270 | A | |||
| full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 297 | A | |||||
| Tj | junction temperature | 150 | °C | ||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C | 35 | mA | |||
| VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C | 35 | mA | |||||
| VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C | 35 | mA | |||||
| IH | holding current | VD = 12 V; Tj = 25 °C | 50 | mA | |||
| VT | on-state voltage | IT = 42 A; Tj = 25 °C | 1.2 | 1.55 | V | ||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 2000 | V/µs | |||
| VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/µs | |||||
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 16 | A/ms | |||
| VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 13 | A/ms |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BTA330Y-800CT |  IITO220 |
Horizontal, Rail Pack | Volume production | Standard Marking | BTA330Y-800CTQ | 9340 696 27127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BTA330Y-800CT | 9340 696 27127 | BTA330Y-800CTQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BTA330Y-800CT | BTA330Y-800CTQ | BTA330Y-800CT |   |
NA | NA |
Chemical Content - BTA330Y-800CT
As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.
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