Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
- High current TRIAC
- 3Q technology for improved noise immunity
- High commutation capability with maximum false trigger immunity
- High immunity to false turn-on by dV/dt
- High junction operating temperature capability (Tj(max) = 150 °C)
- High voltage capability
- Least sensitive gate for highest noise immunity
- Low thermal resistance
- Planar passivated for voltage ruggedness and reliability
- Triggering in three quadrants only
- Insulated tab rated at 2500 V rms
- Applications subject to high temperature (Tj(max) = 150 °C)
- High current / high surge applications
- High power / industrial controls - e.g. heating, motors, lighting
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|---|
| BTA445Z-800BT | VDRM | repetitive peak offstate voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 105 °C; Fig. 1; Fig. 2; Fig. 3 | 45 | A | |||
| ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 | 450 | A | |||
| non-repetitive peak forward current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 495 | A | ||||
| Tj | junction temperature | 150 | °C | ||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 | 50 | mA | |||
| VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 | 50 | mA | |||||
| VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 | 50 | mA | |||||
| IH | holding current | VD = 12 V; Tj = 25 °C; Fig. 9 | 80 | mA | |||
| VT | on-state voltage | IT = 63.6 A; Tj = 25 °C; Fig. 10 | 1.7 | V | |||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/μs | |||
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit | 15 | A/ms |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BTA445Z-800BT |  SOT1292 |
Horizontal, Rail Pack | Volume production | Standard Marking | BTA445Z-800BTQ | 9340 708 32127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BTA445Z-800BT | 9340 708 32127 | BTA445Z-800BTQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BTA445Z-800BT | BTA445Z-800BTQ | BTA445Z-800BT |   |
NA | NA |
Chemical Content - BTA445Z-800BT
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