Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (Tj(max) = 150 °C)
- 3Q technology for improved noise immunity
- High commutation capability with maximum false trigger immunity
- High junction operating temperature capability (Tj(max) = 150 °C)
- High immunity to false turn-on by dV/dt
- High voltage capability
- Less sensitive gate for very high noise immunity
- Planar passivated for voltage ruggedness and reliability
- Triggering in three quadrants only
- Applications subject to high temperature (Tj(max) = 150 °C)
- Compressor starting control circuits
- General purpose motor controls
- Reversing induction motor controls e.g. vertical axis washing machines
Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
BTA308B-800ET | VDRM | repetitive peak off-state voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Tmb ≤134 °C; | 8 | A | |||
ITSM | non-repetitive peak on-state | full sine wave; Tj(init) = 25 °C; tp = 20 ms; | 60 | A | |||
current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 65 | A | ||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+:Tj= 25 °C; | 10 | mA | |||
VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; | 10 | mA | |||||
VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; | 10 | mA | |||||
IH | holding current | VD = 12 V; Tj = 25 °C; | 30 | mA | |||
VT | on-state voltage | IT = 10 A; Tj = 25 °C; | 1.30 | 1.65 | V | ||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 400 | V/μs | |||
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 200 | V/μs | |||||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/µs; gate open circuit |
3 | A/ms | |||
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open circuit |
4 | A/ms | |||||
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 1 V/µs; gate open circuit |
6 | A/ms |
Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
---|---|---|---|---|---|---|
BTA308B-800ET |
TO263 |
STANDARD MARK SMD | Volume production | Standard Marking | BTA308B-800ETJ | 9340 737 60118 |
Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
---|---|---|---|---|---|
BTA308B-800ET | 9340 737 60118 | BTA308B-800ETJ | NA | NA |
Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
---|---|---|---|---|---|---|
BTA308B-800ET | BTA308B-800ETJ | BTA308B-800ET |
Chemical Content - BTA308-800ET
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