Planar passivated high commutation three quadrant triac in a SOT78D (IITO-220) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber where "high junction operating temperature capability" is required.
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High immunity to false turn-on by dV/dt
• High junction operating temperature capability (Tj(max) = 150 °C)
• High voltage capability
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• Internally insulated package
• Isolated mounting base with 2500 V (RMS) isolation
• Electronic themostats (heating and cooling)
• High power motor controls e.g washing machine and vacuum cleaners
• Rectifier-fed DC inductive loads e.g DC motors and solenoids
• Refrigeration and air conditioning compressors
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|---|
| BTA316Y-800BT | VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 112 °C; Fig. 1; Fig. 2; Fig. 3 | 16 | A | |||
| ITSM | non-repetitive peak on- state current | full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5 | 160 | A | |||
| full sine wave; tp = 16.7 ms; Tj(init) = 25 °C | 176 | A | |||||
| Tj | junction temperature | 150 | °C | ||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7 | 50 | mA | |||
| VD = 12 V; IT = 0.1 A; T2+ G- Tj = 25 °C; Fig. 7 | 50 | mA | |||||
| VD = 12 V; IT = 0.1 A; T2- G- Tj = 25 °C; Fig. 7 | 50 | mA | |||||
| IH | holding current | VD = 12 V; Tj = 25 °C; Fig. 9 | 60 | mA | |||
| VT | on-state voltage | IT = 20 A; Tj = 25 °C; Fig. 10 | 1.5 | V | |||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 1000 | V/μs | |||
| rate of rise of off-state voltage | VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 600 | V/μs | ||||
| dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition | 15 | A/ms |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BTA316Y-800BT |  IITO220 |
HORIZONTAL, RAIL PACK | Volume production | Standard Marking | BTA316Y-800BTQ | 9340 720 60127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BTA316Y-800BT | 9340 720 60127 | BTA316Y-800BTQ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BTA316Y-800BT | BTA316Y-800BTQ | BTA316Y-800BT |   |
NA | NA |
Chemical Content - BTA316Y-800BT
As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.
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