Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C)
- High junction operating temperature capability (Tj(max) = 150 °C)
- High bidirectional blocking voltage capability
- Very high current surge capability
- High thermal cycling performance
- Planar passivated for voltage ruggedness and reliability
- Capacitive Discharge Ignition (CDI)
- Crowbar protection
- Inrush protection
- Motor control
- Voltage regulation
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| TYN30B-600TF | VDRM | repetitive peak off-state voltage | 600 | V | |||
| IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 132 °C | 30 | A | |||
| ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 360 | A | |||
| half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 396 | A | |||||
| Tj | junction temperature | 150 | °C | ||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 5 | 10 | mA | ||
| IH | holding current | VD = 12 V; Tj = 25 °C | 40 | mA | |||
| VT | on-state voltage | IT = 30 A; Tj = 25 °C | 1.50 | V | |||
| dVD/dt | rate of rise of off-state voltage | VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 500 | V/µs |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| TYN30B-600TF |
TO263 | STANDARD MARK SMD | Volume production | Standard Marking | TYN30B-600TFJ | 9340 739 40118 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| TYN30B-600TF | 9340 739 40118 | TYN30B-600TFJ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| TYN30B-600TF | TYN30B-600TFJ | TYN30B-600TF | 
 | NA | 1 |
Chemical Content - TYN30B-600TF
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All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
