WBxx030SCM120CGAN

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx030SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     106.4 A
Ptot  total power dissipation  Tmb = 25 °C     652 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 40 A; Tj = 25 °C   30  
QG(tot)  total gate charge  ID = 40 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   151   nC
QGD  gate-drain charge   21   nC
Qr  recovered charge  ISD = 40 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   129   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WB030SCM120CGAN

NAU000

  Volume production Standard Marking WB030SCM120CGAN6Z 9340 734 76006
WBSF030SCM120CGAN WBSF030SCM120CGAN6V 9340 735 08005
WBST030SCM120CGAN WBST030SCM120CGAN6W 9340 734 96007
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB030SCM120CGAN 9340 734 76006 WB030SCM120CGAN6Z NA NA  
WBSF030SCM120CGAN 9340 735 08005 WBSF030SCM120CGAN6V
WBST030SCM120CGAN 9340 734 96007 WBST030SCM120CGAN6W

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB030SCM120CGAN WB030SCM120CGAN6Z WB030SCM120CGAN Leaded  D always Pb-free    
WBSF030SCM120CGAN WBSF030SCM120CGAN6V WBSF030SCM120CGAN
WBST030SCM120CGAN WBST030SCM120CGAN6W WBST030SCM120CGAN

Chemical Content -WBxx030SCM120CGAN

Disclaimer

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