WBxx075SCM120CGAN

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx075SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     54 A
Ptot  total power dissipation  Tmb = 25 °C     366 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 20 A; Tj = 25 °C   75  
QG(tot)  total gate charge  ID = 20 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   162   nC
QGD  gate-drain charge   10   nC
Qr  recovered charge  ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   52   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WB075SCM120CGAN

NAU000

  Volume production Standard Marking WB075SCM120CGAN6Z 9340 734 72006
WBSF075SCM120CGAN WBSF075SCM120CGAN6V 9340 735 11005
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB075SCM120CGAN 9340 734 72006 WB075SCM120CGAN6Z NA NA  
WBSF075SCM120CGAN 9340 735 11005 WBSF075SCM120CGAN6V

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB075SCM120CGAN WB075SCM120CGAN6Z WB075SCM120CGAN Leaded  D always Pb-free    
WBSF075SCM120CGAN WBSF075SCM120CGAN6V WBSF075SCM120CGAN

Chemical Content -WBxx075SCM120CGAN

Disclaimer

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