WNSC2D401200TB

Silicon Carbide Schottky diode in a TSPAK plastic package, featured with top side cooling structure, designed for high frequency, high efficiency systems.

Features and Benefits
  • Top side cooling structure
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Switching mode power supplies
  • UPS & energy storage systems
  • PV inverter and MPPT circuit
  • Battery formation systems
  • EV chargers
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D401200TB VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current   Tmb ≤ 118 °C; DC     40 A
Tj  junction temperature       175 °C
VF  forward voltage  IF = 40 A; Tj = 25 °C   1.42 1.60 V
 IF = 40 A; Tj = 150 °C   1.90 2.30 V
Qr  reverse charge  IF = 40 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   99   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D401200TB

TSPAK

REEL 13\" Q1/T1 *STANDARD MARK SMD"Volume productionStandard MarkingWNSC2D401200TB6J9340 740 03118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D401200TB9340 740 03118WNSC2D401200TB6JNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D401200TBWNSC2D401200TB6JWNSC2D401200TBLeaded  H

Chemical Content - WNSC2D401200TB

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.