Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
- Planar passivated thyristor chips for voltage ruggedness and reliability
- Top-side cooling
- Compact design
- One screw mounting
- Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DBC)
- Package is RoHS compliant
- UPS
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| WTD100TBS12 | VDRM | repetitive peak off-state voltage | 1200 | V | |||
| VRRM | repetitive peak reverse voltage | 1200 | V | ||||
| IT(RMS) | RMS on-state current | half sine wave | 101 | A | |||
| IF(AV) | average forward current | δ = 0.5; square-wave pulse | 100 | A | |||
| ITSM | non-repetitive peak on-state current |
half sine wave; Tj(init) = 25 °C; tp = 10 ms | 1500 | A | |||
| half sine wave; Tj(init) = 150 °C; tp = 10 ms | 1350 | A | |||||
| half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 1650 | A | |||||
| half sine wave; Tj(init) = 150 °C; tp = 8.3 ms | 1485 | A | |||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 30 | 100 | mA | ||
| VGT | gate trigge voltage | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 1.50 | V | |||
| VT | on-state voltage | IT = 200 A; Tj = 25 °C | 1.70 | V | |||
| VF | forward voltage | IF = 100 A; Tj = 25 °C | 1.00 | 1.30 | V |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
