Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dIT/dt can occur. This triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where high junction operating temperature capability is required.
- 3Q technology for improved noise immunity
- High commutation capability with maximum false trigger immunity
- High junction operating temperature capability (Tj(max) = 150 °C)
- High voltage capability
- High current capability
- Less sensitive gate for highest noise immunity
- Triggering in three quadrants only
- Very high immunity to false turn-on by dV/dt and fast transients
- Surface mountable plastic package
- Package is RoHS compliant
- Heating controls
- High power motor control
- High power switching
- Applications subject to high temperature (Tj(max) = 150 °C)
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| BTA330B-800BT | VDRM | repetitive peak off-state voltage | 800 | V | |||
| IT(RMS) | RMS on-state current | full sine wave; Tmb ≤ 120 °C; | 30 | A | |||
| ITSM | non-repetitive peak on-state current |
full sine wave; Tj(init) = 25 °C; tp = 20 ms; | 270 | A | |||
| full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 297 | A | |||||
| Tj | junction temperature | 150 | °C | ||||
| IGT | gate trigger current | VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 °C; | 50 | mA | |||
| VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 °C; | 50 | mA | |||||
| VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 °C; | 50 | mA | |||||
| IL | latching current | VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; |
80 | mA | |||
| VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; |
100 | mA | |||||
| VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; |
80 | mA | |||||
| IH | holding current | VD = 12 V; Tj = 25 °C; | 75 | mA | |||
| VT | on-state voltage | IT = 42 A; Tj = 25 °C; | 1.2 | 1.5 | V | ||
| dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit |
4000 | V/µs | |||
| VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit |
2000 | V/µs | |||||
| dIcom/dt | rate of change of commutating current |
VD = 400 V; Tj = 125 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit |
20 | A/ms | |||
| VD = 400 V; Tj = 150 °C; IT(RMS) = 30 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit |
15 | A/ms |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BTA330B-800BT |  TO263 |
STANDARD MARK SMD | Volume production | Standard Marking | BTA330B-800BTJ | 9340 721 75118 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BTA330B-800BT | 9340 721 75118 | BTA330B-800BTJ | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BTA330B-800BT | BTA330B-800BTJ | BTA330B-800BT |   |
1 | 1 |
Chemical Content - BTA330B-800BT
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