WMSC016F12B2S

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solderpin type. Integrated with NTC temperature sensor.

Features and Benefits

H Bridge topology
Solder pin type
Low R_DSon
Low Switching Losses
Low Q_gand C_rss
Low Inductive Design

Applications

Power inverters
AC-DC converters
Active power factor correctors
Motor drivers

Parametric

Package

Quality, reliability & chemical content

Ordering

Datasheet

Type Number	Symbol	Parameter	Conditions	Min	Typ	Max	Unit
WMSC016F12B2S	V_DS	drain-source voltage				1200	V
	I_D	drain current	V_GS = 18 V; T_h = 25 °C			75	A
	P_tot	total power dissipation	T_h = 25 °C			114	W
	T_j	junction temperature		-40		150	°C
	R_DS(on)	drain-source on-state resistance	V_GS = 15 V; I_D = 75 A; T_j = 25 °C		16		mΩ
	R_DS(on)	drain-source on-state resistance	V_GS = 15 V; I_D = 75 A; T_j = 25 °C		16		mΩ
	Q_G(tot)	total gate charge	I_D = 50 A; V_DS = 800 V; V_GS = -4 V/18 V; T_j = 25 °C		300		nC
	Q_GD	gate-drain charge	I_D = 50 A; V_DS = 800 V; V_GS = -4 V/18 V; T_j = 25 °C		50.6		nC
	Q_r	recovered charge	I_SD = 80 A; V_GS = -4 V; di/dt = 6000 A/μs; V_R = 600 V; T_j = 25 °C		828		nC

Type number	Package	Packing	Product status	Marking	Orderable part number	Ordering code (12NC)
WMSC016F12B2S	WeEnPACK-B2	TRAY PACK,EPE OR BLISTER	Volume production	Standard Marking	WMSC016F12B2S6T	9340 738 18300

Type number

Package

Packing

Product status

Marking

Orderable part number

Ordering code (12NC)

WMSC016F12B2S

WeEnPACK-B2

TRAY PACK,EPE OR BLISTER

Volume production

Standard Marking

WMSC016F12B2S6T

9340 738 18300

Datasheet

Chemical Content

Type number	Ordering code (12NC)	Orderable part number	Region	Distributor	Order sample
WMSC016F12B2S	9340 738 18300	WMSC016F12B2S6T	NA	NA

Chemical content	Orderable part number	Type number	RoHS / RHF	Leadfree conversion date	MSL	MSL LF
WMSC016F12B2S	WMSC016F12B2S6T	WMSC016F12B2S

Chemical Content

Chinese RoHS

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.