WeEn Semiconductors to Showcase High-Performance, High-Density Power Technologies at PCIM Europe 2024
This year’s theme of ‘Power Efficiency for a Cooler Planet’ spans a broad portfolio of high-voltage SiC MOSFETs and power diodes, Thyristors and IGBTs tailored for renewable energy and electric mobility applications.
May 28, 2024, Shanghai, China – WeEn Semiconductors, specialists in developing and manufacturing advanced power semiconductor products, will be exhibiting the company’s latest highly efficient, high-power density silicon carbide (SiC) technologies, automotive grade power devices and highly reliable IGBTs at PCIM Europe 2024 in Nuremberg from June 11-13, 2024.
Established in 1979, PCIM Europe serves as a premier platform for showcasing the latest advancements in power electronics technologies and applications. This year, in Hall 9, booth 538, under the theme of 'Power Efficiency for a Cooler Planet,' WeEn Semiconductors will exhibit its extensive range of high-voltage 1700V SiC power modules, SiC 1200V/750V MOSFETs, Thyristors, power diodes, silicon-controlled rectifiers (SCRs), IGBTs, and other advanced power devices tailored for the renewable energy and e-mobility industries.
With a focus on efficiency, sustainability and cost reduction, WeEn’s broad portfolio offers best-in-class performance, efficiency and density for demanding applications including solar and wind power storage, electric vehicle (EV) fast chargers and traction inverters, HVAC and datacenter servers.
“At WeEn, we are dedicated to developing cost-effective power control technologies that support high voltage ratings and efficient, high-performance operation,” remarked WeEn Semiconductors CEO, Markus Mosen. “We’re excited to showcase the solutions we've launched in recent months at PCIM, not least those technologies targeted at renewable energy and electric mobility applications that demonstrate our commitment to products that not only meet but exceed the unique demands of every application while contributing to environmental sustainability.
PCIM 2024 highlights
● At PCIM, WeEn is set to introduce a range of SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) in TSPAK packages for EV charging, On Board Charger (OBC), PV inverters, and high power density PSU applications. The new MOSFETs are available in 650V, 750V, 1200V, and 1700V variants, with resistance ranging from 20mΩ to 150mΩ. The current range for the new SiC SBDs is 10 to 40A in 650V, 750V, and 1200V variants.
● A range of SiC power modules in half-bridge, four-pack, six-pack, dual booster, and NPC 3L topologies will also be on display. Target markets for these SiC modules include EV charging, energy storage systems, motor drivers, industrial power supply units (PSUs), test instruments, and PV inverters.
● 1700V SiC series and 1200V / 750V auto-grade SiC MOSFETs, which encompass a diverse range of packaging options and product configurations, including surface-mount device (SMD) discrete components and top-side cooling.
● Highly reliable thyristor/diode modules, suitable for mainstream industrial applications like UPS, Inverter, soft starter, with VDRM up to 1600V and IT(RMS) up to 250A . Thanks for its planar chip technology and state-of-art module manufacture capability, those modules can be in half-bridge, parallel or antiparallel or other customized topology, it has passed 1000 hours reliability test under JEDEC standard as well 100% Pb-Free for the highest level EU RoHS compliance.
● WeEn’s product platforms include Super Junction MOSFETs with breakdown voltage ranges of 600V, 650V, and 800V. Leveraging advanced 8-inch wafer technology, WeEn offers a wide range of trench MOSFETs with voltage ranges from 20V to 30V.
● With voltage ratings from 45V to 2000V, WeEn’s Power Diodes feature current ratings from 1A to 100A. The company’s product portfolio includes low VF Schottky rectifiers, standard diodes, and ultrafast recovery rectifiers.
● WeEn's range of IGBTs boasts extremely low leakage currents and exceptional conduction and switching characteristics at both high and low junction temperatures. They have undergone high voltage H3TRB and 100%-biased HTRB tests with a maximum junction temperature of 175°C safely. These application-specific IGBTs have been tuned to match the precise needs of each application, including switching behaviors, conduction losses, short circuit capabilities, environmental ruggedness, and freewheeling diode characterization. The 1200V and 650V variant current products, including bare dies, discrete components, and PIMs, are offered to various end customers.
For more information, please explore WeEn Semiconductors’ product portfolio here.
Learn more about the products on display at PCIM this year here.
About WeEn Semiconductors
WeEn Semiconductors Co., Ltd was registered as a company on August 5, 2015 since spun off from NXP. With a heritage of over 50 years in power semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, Standard and Fast Recovery Power Diodes, IGBTs, TVS and ESD protection Devices, Si MOSFETs and Power Modules. All these products are widely used in the markets for automotive, renewable energy, telecommunications, computing, consumer electronics, intelligent home appliances, lighting, and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.
For more information, please visit https://www.ween-semi.com
