Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic package with self-protective capabilities against low and high energy transients. This "series CTN" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
- Clamping structure ensuring safe high over-voltage withstand capability
- High junction operating temperature capability (Tj(max) = 150 °C)
- High minimum IGT for guaranteed immunity to gate noise
- Full cycle AC conduction
- Over-voltage withstand capability to IEC 61000-4-5
- Pin compatible with standard triacs
- Planar passivated for voltage ruggedness and reliability
- Protective self turn-on capability for high energy transients
- Safe clamping capability for low energy over-voltage transients
- Less sensitive gate for high noise immunity
- Triggering in three quadrants only
- Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
- Package meets UL94V0 flammability requirement
- Package is RoHS compliant
- Package meets UL1557 isolation test requirement rated at 2500V RMS
- AC fan, pump and compressor controls
- Highly inductive, resistive and safety loads
- Large and small appliances (White Goods)
- Reversing induction motor controls
- Applications subject to high temperature (Tj(max) = 150 °C)
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
ACTT10X-800CTN | VDRM | repetitive peak offstate voltage | 800 | V | |||
IT(RMS) | RMS on-state current | full sine wave; Th ≤ 95 °C; Fig. 1; Fig. 2; Fig. 3 | 10 | A | |||
ITSM | non-repetitive peak on-state current | full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 | 90 | A | |||
non-repetitive peak forward current | full sine wave; Tj(init) = 25 °C; tp = 16.7 ms | 99 | A | ||||
Tj | junction temperature | 150 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 | 5 | 35 | mA | ||
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 | 5 | 35 | mA | ||||
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 | 5 | 35 | mA | ||||
IH | holding current | VD = 12 V; Tj = 25 °C; Fig. 10 | 30 | mA | |||
Vt | on-state voltage | IT = 14 A; Tj = 25 °C; Fig. 11 | 1.5 | V | |||
dVD/dt | rate of rise of off-state voltage | VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit | 4000 | V/μs | |||
VDM = 536 V; Tj = 150 °C; exponential waveform; gate open circuit | 2000 | V/μs | |||||
dIcom/dt | rate of change of commutating current | VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; gate open circuit; snubberless condition | 5 | A/ms |
Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
---|---|---|---|---|---|---|
ACTT10X-800CTN | TO220F |
Horizontal, Rail Pack | Volume production | Standard Marking | ACTT10X-800CTNQ | 9340 700 98127 |
Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
---|---|---|---|---|---|
ACTT10X-800CTN | 9340 700 98127 | ACTT10X-800CTNQ | NA | NA |
Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
---|---|---|---|---|---|---|
ACTT10X-800CTN | ACTT10X-800CTNQ | ACTT10X-800CTN | 2015-12-22 | NA | NA |
Chemical Content - ACTT10X-800CTN
As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.