Ultrafast power diode in a TO247-2L plastic package.
- 650V FRD
- Low thermal resistance
- Low forward voltage drop
- Low leakage current & reverse recovery current
- Enhanced Eas capability suitable for industrical application
- Reduces switching losses in associated MOSFET or IGBT
- Package meets UL94 V-0 which guaranteed by Epoxy Mold Compound
- NPC-I in UPS
- LLC in EV charger
- PFC in air conditioner or welding machine
- Power Factor Correction (PFC)
- 2nd rectification in HB/FB SMPS
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| BYV80MW-650PT2 | VRRM | repetitive peak reverse voltage | 650 | V | |||
| IF(AV) | average forward current | δ = 0.5; Tmb ≤ 114 °C; square-wave pulse | 80 | A | |||
| IFRM | repetitive peak forward current | δ = 0.5; tp = 25 µs; Tmb ≤ 114 °C; square-wave pulse | 160 | A | |||
| IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse | 730 | A | |||
| tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse | 800 | A | |||||
| VF | forward voltage | IF = 80 A; Tj = 25 °C | 1.40 | 1.70 | V | ||
| IF = 80 A; Tj = 150 °C | 1.20 | 1.40 | V | ||||
| trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C | 46 | ns |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| BYV80MW-650PT2 |
TO247-2L |
HORIZONTAL, RAIL PACK | Volume production | Standard Marking | BYV80MW-650PT2Q | 9340 737 37127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| BYV80MW-650PT2 | 9340 737 37127 | BYV80MW-650PT2Q | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| BYV80MW-650PT2 | BYV80MW-650PT2Q | BYV80MW-650PT2 |   |
NA |
Chemical Content - BYV50MW-650PT2
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
