Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
- Low on-resistance
- Fast switching speed
- 0V turn-off gate voltage for simple gate drive
- Easy to parallel
- Controllable dV/dt for optimized EMI
- Reduced cooling requirements
- RoHS compliant
| Type Number | Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| WBxx012SCM120CGGN | VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | 1200 | V | ||
| ID | drain current | VGS = 18 V; Tmb = 25 °C | 216 | A | |||
| Ptot | total power dissipation | Tmb = 25 °C; Tj = 175 °C; assumes die package in TO-247 package with Rth(j-c) < 0.14 K/W | 1071 | W | |||
| Tj | junction temperature | -55 | 175 | °C | |||
| RDS(on) | drain-source on-state resistance | VGS = 15 V; ID = 75 A; Tj = 25 °C | 12 | mΩ | |||
| QG(tot) | total gate charge | ID = 75 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C | 321 | nC | |||
| QGD | gate-drain charge | 57 | nC | ||||
| Qr | recovered charge | ISD = 50 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C | 250 | nC |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
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