WBxx08SC65AN

Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr * VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WBxx08SC65AN VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     8 A
Tj  junction temperature    -55   175
VF  forward voltage  IF = 8 A; Tj = 25 °C   1.26 1.40 V
VF  forward voltage  IF = 8 A; Tj = 150 °C   1.35 1.55 V
VF  forward voltage  IF = 8 A; Tj = 175 °C   1.40 1.60 V
Qr  recovered charge  IF = 8 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C   18   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WBSF08SC65AN NAU000 NO MARK*CHIPS ON WFR, SAWN ON FFC, NON-COND Volume production Standard Marking WBSF08SC65AN6V 9340 742 86005
WBST08SC65AN

NAU000

NO MARK*CHIPS IN WAFFLE PACK,SAWN Volume production Standard Marking WBST08SC65AN6W 9340 742 88007
WB08SC65AN

NAU000

NO MARK*CHIPS ON WFR, UNSAWN ON FFC, CONDUCTIVE Volume production Standard Marking WB08SC65AN6Z 9340 742 87006
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WBSF08SC65AN 9340 742 86005 WBSF08SC65AN6V NA NA  
WBST08SC65AN 9340 742 88007 WBST08SC65AN6W NA NA  
WB08SC65AN 9340 742 87006 WB08SC65AN6Z NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WBSF08SC65AN WBSF08SC65AN6V WBSF08SC65AN Leaded  D always Pb-free    
WBST08SC65AN WBST08SC65AN6W WBST08SC65AN Leaded  D always Pb-free    
WB08SC65AN WB08SC65AN6Z WB08SC65AN Leaded  D always Pb-free    

Chemical Content - WBxx08SC65AN

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