WBxx10SC120AL

Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr * VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WBxx10SC120AL VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     10 A
Tj  junction temperature    -55   175 ℃
VF  forward voltage  IF = 10 A; Tj = 25 °C   1.42 1.60 V
VF  forward voltage  IF = 10 A; Tj = 150 °C   1.90 2.30 V
VF  forward voltage  IF = 10 A; Tj = 175 °C   2.00 2.50 V
Qr  recovered charge  IF = 10 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C   22   nC

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Chemical Content - WBxx10SC120AL

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