WBxx10SC65AN

Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr * VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WBxx10SC65AN VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     10 A
Tj  junction temperature    -55   175
VF  forward voltage  IF = 10 A; Tj = 25 °C   1.29 1.45 V
VF  forward voltage  IF = 10 A; Tj = 150 °C   1.45 1.65 V
VF  forward voltage  IF = 10 A; Tj = 175 °C   1.50 1.70 V
Qr  recovered charge  IF = 10 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C   24   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WBSF10SC65AN

NAU000

DIODES(NOT PHOTOSENS/LIGHT EM)Volume productionStandard MarkingWBSF10SC65AN6V9340 743 33005
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WBSF10SC65AN9340 743 33005WBSF10SC65AN6VNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WBSF10SC65ANWBSF10SC65AN6VWBSF10SC65ANLeaded  Dalways Pb-free

Chemical Content - WBxx10SC65AN

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