WBxx160SCM120CGAL

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx160SCM120CGAL VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     24 A
Ptot  total power dissipation  Tmb = 25 °C     155 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 10 A; Tj = 25 °C   160  196
QG(tot)  total gate charge  ID = 10 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   35   nC
QGD  gate-drain charge   8   nC
Qr  recovered charge  ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   78   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WB160SCM120CGAL

NAU000

  Volume production Standard Marking WB160SCM120CGALZ 9340 734 79006
WBSF160SCM120CGAL WBSF160SCM120CGALV 9340 735 14005
WBST160SCM120CGAL WBST160SCM120CGALW -
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB160SCM120CGAL 9340 734 79006 WB160SCM120CGALZ NA NA  
WBSF160SCM120CGAL 9340 735 14005 WBSF160SCM120CGALV
WBST160SCM120CGAL - WBST160SCM120CGALW

Please login or register before apply WeEn sample.

Image CAPTCHA
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB160SCM120CGAL WB160SCM120CGALZ WB160SCM120CGAL Leaded  D always Pb-free    
WBSF160SCM120CGAL WBSF160SCM120CGALV WBSF160SCM120CGAL
WBST160SCM120CGAL WBST160SCM120CGALW WBST160SCM120CGAL

Chemical Content -WBxx160SCM120CGAL

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.