WBxx20SC120AL

Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr * VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WBxx20SC120AL VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     20 A
Tj  junction temperature    -55   175
VF  forward voltage  IF = 20 A; Tj = 25 °C   1.45 1.65 V
VF  forward voltage  IF = 20 A; Tj = 150 °C   1.95 2.30 V
VF  forward voltage  IF = 20 A; Tj = 175 °C   2.10 2.60 V
Qr  recovered charge  IF = 20 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C   45   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WBSF20SC120AL NAU000 NO MARK*CHIPS ON WFR, SAWN ON FFC, NON-COND Volume production Standard Marking WBSF20SC120AL6V 9340 739 12005
WB20SC120AL

NAU000

NO MARK*CHIPS ON WFR, UNSAWN ON FFC, CONDUCTIVE Volume production Standard Marking WB20SC120AL6Z 9340 734 57006
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WBSF20SC120AL 9340 739 12005 WBSF20SC120AL6V NA NA  
WB20SC120AL 9340 734 57006 WB20SC120AL6Z NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WBSF20SC120AL WBSF20SC120AL6V WBSF20SC120AL Leaded  D always Pb-free    
WB20SC120AL WB20SC120AL6Z WB20SC120AL Leaded  D always Pb-free    

Chemical Content - WBxx20SC120AL

Disclaimer

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