Silicon Carbide Schottky diode (Bare Die).
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- Extremely fast reverse recovery time
- Low figure of merit (Qr * VF)
- Highly stable switching performance
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| WBxx20SC120AL | VRRM | repetitive peak reverse voltage | 1200 | V | |||
| IF(AV) | average forward current | δ = 0.5; square-wave pulse | 20 | A | |||
| Tj | junction temperature | -55 | 175 | ℃ | |||
| VF | forward voltage | IF = 20 A; Tj = 25 °C | 1.45 | 1.65 | V | ||
| VF | forward voltage | IF = 20 A; Tj = 150 °C | 1.95 | 2.30 | V | ||
| VF | forward voltage | IF = 20 A; Tj = 175 °C | 2.10 | 2.60 | V | ||
| Qr | recovered charge | IF = 20 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C | 45 | nC |
Chemical Content - WBxx20SC120AL
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