WBxx30SC65AL

Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr * VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WBxx30SC65AL VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     30 A
Tj  junction temperature    -55   175
VF  forward voltage  IF = 30 A; Tj = 25 °C   1.45 1.70 V
VF  forward voltage  IF = 30 A; Tj = 150 °C   1.80 2.20 V
VF  forward voltage  IF = 30 A; Tj = 175 °C   2.00 2.30 V
Qr  recovered charge  IF = 30 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C   48   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WBSF30SC65AL NAU000 NO MARK*CHIPS ON WFR, SAWN ON FFC, NON-COND Volume production Standard Marking WBSF30SC65AL6V 9340 738 23005
WBST30SC65AL

NAU000

NO MARK*CHIPS IN WAFFLE PACK,SAWN Volume production Standard Marking WBST30SC65AL6W 9340 737 20007
WB30SC65AL

NAU000

NO MARK*CHIPS ON WFR, UNSAWN ON FFC, CONDUCTIVE Volume production Standard Marking WB30SC65AL6Z 9340 738 21006
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WBSF30SC65AL 9340 738 23005 WBSF30SC65AL6V NA NA  
WBST30SC65AL 9340 737 20007 WBST30SC65AL6W NA NA  
WB30SC65AL 9340 738 21006 WB30SC65AL6Z NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WBSF30SC65AL WBSF30SC65AL6V WBSF30SC65AL Leaded  D always Pb-free    
WBST30SC65AL WBST30SC65AL6W WBST30SC65AL Leaded  D always Pb-free    
WB30SC65AL WB30SC65AL6Z WB30SC65AL Leaded  D always Pb-free    

Chemical Content - WBxx30SC65AL

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