WG25R135W1

WG25R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package. This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation.

Features and Benefits
  • Reverse Conducting IGBT with Monolithic Body Diode
  • Maximum Junction Temperature 175 °C
  • Low Conduction Losses
  • Positive Temperature efficient for Easy Parallel Operating
  • EMI Improved Design
Applications
  • Microwave ovens
  • Induction heating
  • Resonant converters
  • Soft switching applications
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WG25R135W1 VCE  collector-emitter voltage  Tj ≥ 25 °C     1350 V
IC  collector current  limited by Tj(max); TC = 100 °C     25 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 25 A; Tj = 25 °C   1.85 2.40 V
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WG25R135W1

TO247

STANDARD MARKING * HORIZONTAL, RAIL PACKVolume productionStandard MarkingWG25R135W1Q9340 742 69127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG25R135W19340 742 69127WG25R135W1QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG25R135W1WG25R135W1QWG25R135W1Leaded  H

 

 

Disclaimer

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