WG50N65HAW1

WG50N65HAW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO247 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features and Benefits
  • Maximum junction temperature 175 °C
  • Positive Temperature efficient for easy paralleling
  • Very soft, fast recovery anti-parallel diode
  • High speed switching
  • EMI Improved Design
Applications
  • PFC
  • Solar converters
  • UPS
  • Welding Converters
  • Mid to high range switching frequency converters
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WG50N65HAW1 VCE  collector-emitter voltage  Tj ≥ 25 °C     650 V
IC  collector current  limited by Tj(max); TC = 100 °C     50 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.6 2.1 V
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WG50N65HAW1

TO247

HORIZONTAL, RAIL PACK Volume production Standard Marking WG50N65HAW1Q 9340 736 73127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG50N65HAW1 9340 736 73127 WG50N65HAW1Q NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG50N65HAW1 WG50N65HAW1Q WG50N65HAW1 Leaded  H NA    

Chemical Content - WG50N65HAW1

 

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