WMS30N500SK

WMS30N500SK is a high performance super logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • High ESD sensitivity devices
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • RoHS Compliant, Halogen Free and Lead Free
Applications
  • Load Switch
  • General PWM Applications
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WMS30N500SK VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±12 V
ID  drain current  VGS = 4.5 V; Tmb = 25 °C     4.2 A
Ptot  total power dissipation  Tmb = 25 °C     1.4 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 4.5 V; ID = 4.2 A   38 50
 VGS = 2.5 V; ID = 3 A   50 64
QG(tot)  total gate charge  ID = 4.2 A; VDS = 15 V; VGS = 4.5 V   3.9   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WMS30N500SK

SOT23

STANDARD MARK SMD Volume production Standard Marking WMS30N500SKX 9340 734 16115
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMS30N500SK 9340 734 16115 WMS30N500SKX NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMS30N500SK WMS30N500SKX WMS30N500SK Leaded  D always Pb-free   1

Chemical Content - WMS30N500SK

 

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