WMSC020F12B1P

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type.
Integrated with NTC temperature sensor.

Features and Benefits
  • H Bridge topology
  • Press-fit pin type
  • Low RDSon
  • Low Switching Losses
  • Low Qg and Crss
  • Low Inductive Design
Applications
  • Power inverters
  • AC-DC converters
  • Active power factor correctors
  • Motor drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WMSC020F12B1P VDS  drain-source voltage  Tj = 25 °C     1200 V
ID  drain current  VGS = 18 V; Th = 25 °C     57 A
Ptot  total power dissipation  Th = 25 °C     84 W
RDS(on)  drain-source on-state  resistance  VGS = 15 V; ID = 50 A; Tj = 25 °C   20  
QG(tot)  total gate charge  ID = 50 A; VDS = 800 V; VGS = -0 V/18 V;
 Tj = 25 °C
  215   nC
QGD  gate-drain charge   32   nC
Qr  recovered charge  ISD = 50 A; VGS = -4 V/18V; VR = 600 V;
 di/dt = 2900 A/μs;  R
G(ext) = 5.1 Ω; Tj = 25 °C
  587   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WMSC020F12B1P

WeEnPACK-B1

TRAY PACK,EPE OR BLISTER Volume production Standard Marking WMSC020F12B1P6T 9340 738 14300
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMSC020F12B1P 9340 738 14300 WMSC020F12B1P6T NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMSC020F12B1P WMSC020F12B1P6T WMSC020F12B1P Leaded  E      

 

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.