WMSC020S12B1P

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.
NTC temperature sensor inside.

Features and Benefits
  • 3-phase full bridge topology
  • Press-fit pin configuration
  • Low ON resistance
  • Low switching losses
  • Reduced Qg and Crss
  • Minimized circuit impedance
  • Robust product design
Applications
  • EV chargers
  • Energy storage and solar energy systems
  • Power Inverters
  • AC/DC converters
  • Power factor correctors
  • Motor drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WMSC020S12B1P VDS  drain-source voltage       1200 V
ID  drain current  VGS = 18 V; Th = 25 °C     59 A
Ptot  total power dissipation  Th = 25 °C     91 W
Tj  junction temperature   -40   150 °C
RDS(on)  drain-source on-state  resistance  VGS = 15 V; ID = 50 A; Tj = 25 °C   20  
QG(tot)  total gate charge  ID = 50 A; VDS = 800 V; VGS = -4 V/18 V;
 T
j = 25 °C
  215   nC
QGD  gate-drain charge   32   nC
Qr  recovered charge  ISD = 50 A; VGS = -4 V/18 V; VR = 600 V;
di/dt = 2300 A/μs;  R
G(ext) = 5.1 Ω; Tj = 25°C
  1072   nC

 

Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
             
Datasheet
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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
             

Chemical Content - WMSC020S12B1P

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.