WNSC2D12650T

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED/OLED TV
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D12650T VRRM     - - 650 V
IF(AV) average forward current δ = 0.5 ; Tc ≤ 146 °C; square-wave pulse; - - 12 A
Tj junction temperature   - - 175 °C
VF forward voltage IF = 12 A; Tj = 25 °C; - 1.5 1.7 V
Qr recovered charge IF = 12 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; - 17.5 - nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D12650T

DFN8X8

STANDARD MARK SMD Volume production Standard Marking WNSC2D12650T 9340 727 82118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D12650T 9340 727 82118 WNSC2D12650T NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D12650T WNSC2D12650TJ WNSC2D12650T Leaded  D always Pb-free   3

Chemical Content -

Disclaimer

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