WNSC2D201200CW-A

Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switching mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
  • AEC-Q101 qualified
Applications
  • EV On Board Chargers
  • EV DC-DC converters
  • Other EV HV systems

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2D201200CW-A VRRM  repetitive peak reverse voltage       1200 V
IO  continuous forward current  Tmb ≤ 143 °C; DC; both diodes     20 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 10 A; Tj = 25 °C; per diode   1.42 1.60 V
 IF = 10 A; Tj = 150 °C; per diode   1.90 2.30 V
Qr  reverse charge  IF = 10 A; dIF/dt = 500 A/µs; VR = 400 V; Tj = 25 °C; per diode   22   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D201200CW-A

TO247

STANDARD MARKING * HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2D201200CW-A6Q 9340 729 91127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D201200CW-A 9340 729 91127 WNSC2D201200CW-A6Q NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D201200CW-A WNSC2D201200CW-A6Q WNSC2D201200CW-A Leaded  H      

 

 

Disclaimer

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