WNSC2D301400W

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switching mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Switching mode power supplies
  • UPS & energy storage systems
  • PV inverter and MPPT circuit
  • Battery formation systems
  • EV chargers
  • Motor Drives

 

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2D301400W VRRM  repetitive peak reverse voltage       1400 V
IF  continuous forward current  Tmb ≤ 130 °C; DC     30 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 30 A; Tj = 25 °C   1.42 1.60 V
 IF = 30 A; Tj = 150 °C   1.90 2.30 V
Qr  reverse charge  IF = 30 A; VR = 400 V; dIF/dt = 500 A/µs;
T
j = 25 °C
  68   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D301400W

TO247-2L

STANDARD MARKING * HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSC2D301400W6Q9340 742 16127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D301400W9340 742 16127WNSC2D301400W6QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D301400WWNSC2D301400W6QWNSC2D301400WLeaded  Dalways Pb-free

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.