WNSC2M1K0170J

Silicon Carbide MOSFET in a 3-lead TO3PF plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Optimized for fly-back topologies
  • 15V/0V gate-source voltage compatible with fly-back controllers
  • 100% UIS Tested
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • Enlarge creepage distance
  • RoHS compliant
Applications
  • Auxiliary Power Supplies
  • Switch Mode Power Supplies
  • Solar Inverter
  • Frequency converter
  • Industrial power supply
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M1K0170J VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1700 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     4.6 A
Ptot  total power dissipation  Tmb = 25 °C     34 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 1 A; Tj = 25 °C   1000  
QG(tot)  total gate charge  ID = 2 A; VDS = 1200 V; VGS = 0 V/18 V; Tj = 25 °C   12   nC
QGD  gate-drain charge   5   nC
Qr  recovered charge  ISD = 1 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   38   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M1K0170J

SOT1293

HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2M1K0170JQ 9340 737 41127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M1K0170J 9340 737 41127 WNSC2M1K0170JQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M1K0170J WNSC2M1K0170JQ WNSC2M1K0170J Leaded  H      

Chemical Content - WNSC2M1K0170J

 

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