WNSC2M20065R

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Kelvin source configuration
  • Low specific on-resistance
  • Optimized dynamic performance
  • Robust gate design
  • 0V turn-off VGS for simple gate driving
  • 100% UIS Tested
  • Easy to parallel
  • RoHS compliant
Applications
  • PC/server/telecom power supplies
  • UPS & Energy storage system
  • Battery formation instrument
  • PV MPPT and inverters
  • EV Charger
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M20065R VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     650 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     154 A
Ptot  total power dissipation  Tmb = 25 °C; Tj = 175 °C     600 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 55 A; Tj = 25 °C   20 26 
QG(tot)  total gate charge  ID = 55 A; VDS = 400 V; VGS = -4 V/18 V; Tj = 25 °C   191   nC
QGD  gate-drain charge   28   nC
Qr  recovered charge  ISD = 55 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   215   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M20065R

TO247-4L

HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSC2M20065R6Q9340 739 78127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M20065R9340 739 78127WNSC2M20065R6QNANA

Please login or register before apply WeEn sample.

Image CAPTCHA
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M20065RWNSC2M20065R6QWNSC2M20065RLeaded  Dalways Pb-free

 

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.