WNSC2M20120TB-A

Silicon Carbide MOSFET in a TSPAK plastic package with top side cooling structure, designed for high frequency, high efficiency systems.

Features and Benefits
  • Automotive Qualified (AEC-Q101)
  • Reduced cooling requirements
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate driver
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • RoHS compliant
Applications
  • Automotive on board chargers
  • Automotive DC-DC converters
  • Automotive electric compressor motor drives
  • HV battery management systems
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2M20120TB-A VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     134 A
Ptot  total power dissipation  Tmb = 25 °C; Tj = 175 °C     592 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 50 A; Tj = 25 °C   20  
 VGS = 18 V; ID = 50 A; Tj = 25 °C   16.3 29
QG(tot)  total gate charge  ID = 50 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   215   nC
QGD  gate-drain charge   32   nC
Qr  recovered charge  ISD = 50 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   276   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M20120TB-A

TSPAK

REEL 13\" Q1/T1 *STANDARD MARK SMD"Volume productionStandard MarkingWNSC2M20120TB-A6J9340 740 84118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M20120TB-A9340 740 84118WNSC2M20120TB-A6JNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M20120TB-AWNSC2M20120TB-A6JWNSC2M20120TB-ALeaded  H

Chemical Content - WNSC2M20120TB-A

 

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