WNSC2M40120R-A

Silicon Carbide MOSFET in a TO247-4L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Kelvin source configuration
  • Low specific on-resistance
  • Optimized dynamic performance
  • 0V turn-off VGS for simple gate driving
  • 100% UIS Tested
  • Easy to parallel
  • RoHS compliant
  • Automotive Qualified (AEC-Q101)
Applications
  • Automotive on board chargers
  • Automotive DC-DC converters
  • Automotive electric compressor motor drives
  • HV battery management systems
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M40120R-A VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     81 A
Ptot  total power dissipation  Tmb = 25 °C; Tj = 175 °C     375 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 33 A; Tj = 25 °C   40  
QG(tot)  total gate charge  ID = 33 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   115   nC
QGD  gate-drain charge   18   nC
Qr  recovered charge  ISD = 33 A; di/dt = 2490 A/μs; VDS = 600 V; Tj = 25 °C   300   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M40120R-A

TO247-4L

STANDARD MARKING * HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSC2M40120R-A6Q9340 740 73127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M40120R-A9340 740 73127WNSC2M40120R-A6QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M40120R-AWNSC2M40120R-A6QWNSC2M40120R-ALeaded  H

Disclaimer

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