WNSC2M75120B7-A

Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Kelvin source configuration
  • Low specific on-resistance
  • Optimized dynamic performance
  • 0V turn-off VGS for simple gate driving
  • 100% UIS Tested
  • Easy to parallel
  • RoHS compliant
  • Automotive Qualified (AEC-Q101)
Applications
  • Automotive on board chargers
  • Automotive DC-DC converters
  • Automotive electric compressor motor drives
  • HV battery management systems
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WNSC2M75120B7-A VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     43 A
Ptot  total power dissipation  Tmb = 25 °C     234 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 20 A; Tj = 25 °C   75  
QG(tot)  total gate charge  ID = 20 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   63   nC
QGD  gate-drain charge   11   nC
Qr  recovered charge  ISD = 20 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   49   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2M75120B7-A

TO263-7L

REEL 13\" Q1/T1 *STANDARD MARK SMD" Volume production Standard Marking WNSC2M75120B7-A6J 9340 740 44118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M75120B7-A 9340 740 44118 WNSC2M75120B7-A6J NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M75120B7-A WNSC2M75120B7-A6J WNSC2M75120B7-A Leaded  H     1

 

 

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