WNSC6D30650BT2-A

Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies

Features and Benefits
  • New 6th Generation Technology
  • Low Forward Voltage Drop
  • Low Reverse Leakage Current
  • High Forward Surge Capability IFSM
  • Reduced losses in associated MOSFET
  • Reduced EMI • Reduced cooling requirements
  • RoHS compliant
  • AEC-Q101 qualified
Applications
  • EV On Board Chargers
  • EV DC-DC converters
  • Other EV HV systems

 

 

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC6D30650BT2-A VRRM  repetitive peak reverse voltage       650 V
IF  continuous forward current  Tmb ≤ 143 °C; DC     30 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 30 A; Tj = 25 °C   1.26 1.40 V
Qr  reverse charge  IF = 30 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   72   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC6D30650BT2-A

TO263-2L

REEL 13\" Q1/T1 *STANDARD MARK SMD" Volume production Standard Marking WNSC6D30650BT2-A6J 9340 728 33118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC6D30650BT2-A 9340 728 33118 WNSC6D30650BT2-A6J NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC6D30650BT2-A WNSC6D30650BT2-A6J WNSC6D30650BT2-A Leaded  H      

Disclaimer

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