WSJM65R120X

WSJM65R120X is a high voltage N-channel MOSFET in TO220F package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

Features and Benefits
  • Superior FOM RDS(on) * Qg
  • Extremely low switching loss
  • 100% avalanche tested
Applications
  • Server power
  • LEV charger
  • LED power
  • Adapters
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ Max Unit
WSJM65R120X VDS  drain-source voltage       650 V
VGS  gate-source voltage       ±30 V
ID  continuous drain current  Tmb = 25 °C     30 A
Ptot  power dissipation  Tmb = 25 °C     36 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 15 A   105 120 mΩ
QG(tot)  total gate charge  ID = 15 A; VDS = 400 V; VGS = 10 V   54   nC
EOSS  coss stored erergy  VGS = 0 V; VDS = 0 to 400 V   6.6   μJ
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WSJM65R120X

SOT186A

 HORIZONTAL, RAIL PACK Volume production Standard Marking WSJM65R120XQ 9340 739 21127
Datasheet
Chemical Content
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WSJM65R120X 9340 739 21127 WSJM65R120XQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WSJM65R120X WSJM65R120XQ WSJM65R120X Leaded  H NA   1

Chemical Content - WSJM65R120X

 

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