Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Silicon Carbide Schottky diode (Bare Die).

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Silicon Carbide MOSFET (Bare Die).

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Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 surface mountable plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 surface mountable plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

During July 11-13, 2023, WeEn Semiconductors will exhibit leading-edge power semiconductor products at the Electronica China which hold at National Exhibition and Convention Center (Shanghai). Our exhibits will include SiC Power device, Thyristors and Power diodes, IGBT, Protection products and Power modules. We will also focus on the application like electrical vehicle, renewable energy and show how WeEn product can perform in those applications.