The ESDAHD712BE2 is designed for asymmetrical (12V to -7V) protection in multi-point data transmission standard RS-485 applications. The ESDAHD712BE2 can be used to protect devices from transient voltages resulting from electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges.

Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability，high thermal cycling performance and high junction temperature capability (T_j(max) = 150 °C).

EEPP^TM- Efficiency Enhanced Pt Planar diode in a 2-leads TO247-2L plastic package.

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

High speed IGBT with anti-parallel diode in TO247 package.

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnPACK-20mm (TO-240AA) for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance

Hyperfast power diode in a IITO220F-2L plastic package

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solderpin type. Integrated with NTC temperature sensor.

WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.