Silicon Carbide MOSFET (Bare Die).

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Silicon Carbide MOSFET (Bare Die).

Please contact us.

Silicon Carbide MOSFET (Bare Die).

Please contact us.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Integrated NTC temperature sensor, configured with Pressfit pin and pre-applied thermal paste.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Integrated NTC temperature sensor, configured with Pressfit pin and pre-applied thermal paste.

Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).

Planar passivated high commutation three quadrant triac in a TO220 plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (Tj(max) = 150 °C).

Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 package intended for use in applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C).

Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 package intended for use in applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (T_j(max) = 150 °C).

Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 package intended for use in applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C).