WBxx012SCM120CGGN
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WTD120TBS12
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
WTD100TBS12
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
WAT120TBS16
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
WAT120TBS12
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
WAT100TBS16
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
WAT100TBS12
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
BYC31MY-650PS
Hyperfast power diode in a IITO220F-2L plastic package
WMSC016F12B2S
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solderpin type. Integrated with NTC temperature sensor.
WMSC016F12B2P
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.
