Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability，high thermal cycling performance and high junction temperature capability (T_j(max) = 150 °C).

Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switched-mode power supplies.

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed for high frequency switched-mode power supplies.

EEPP^TM- Efficiency Enhanced Pt Planar diode in a 2-leads TO247-2L plastic package.

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.