Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (T_j(max) = 150 °C)

Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance

Standard reverse recovery power diode in a TO247-2L package.

Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.

Standard reverse recovery power diode in a TO247-2L package.

Ultrafast power diode in a TO247-2L plastic package.

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max)] = 150 °C).