WMSC008H12B2P
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Pressfit type. Integrated with NTC temperature sensor.
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)
Planar passivated Silicon Controlled Rectifier (SCR) in a TO247 surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)
Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)