SNEC第十七届(2024)国际太阳能光伏与智慧能源(上海)大会暨展览会（简称“SNEC”）将于2024年6月13-15日在国家会展中心

一年一度的PCIM Europe将于6月11日至13日.在德国纽伦堡会展中心盛大举行.作为PCIM Europe的常客，瑞能半导体今年再度参展，届时我们会携瑞能的最新产品组合与应用方案亮相Hall 9-538展台，期待您的

Planar passivated SCR with sensitive gate in surface mountable SOT23 (TO-236AB) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated SCR with sensitive gate in surface mountable SOT23 (TO-236AB) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance

Ultrafast power diode in IITO220-2L plastic package

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (T_j(max) = 150 °C)

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.