Ultrafast power diode in IITO220-2L plastic package

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (T_j(max) = 150 °C)

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Planar passivated high commutation three quadrant triac in a TO220 plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intendedfor use in applications requiring very high inrush current capability and high thermal cycling performance.

Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies

Silicon Carbide Schottky diode (Bare Die).

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