WBxx030SCM120CGAN
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WBxx040SCM120CGAN
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WBxx060SCM120CGAN
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WBxx075SCM120CGAN
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WBxx080SCM120CGAL
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WBxx160SCM120CGAL
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
WBxx150SCM120CGAN
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
TYN30B-600TF
Planar passivated Silicon Controlled Rectifier (SCR) in a TO263 (D2PAK) surface mountable plastic package intended for use in applications applications requiring good bidirectional blocking voltage and high surge current capability and high junction temperature capability (Tj(max) = 150 °C)
BT153W-1200T
Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance
WND60P20W
Standard reverse recovery power diode in a TO247-2L package.
