Planar passivated Silicon Controlled Rectifier (SCR) in a TO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (T_j(max) = 150 °C)

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.
NTC temperature sensor inside.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.
NTC temperature sensor inside.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.
NTC temperature sensor inside.

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type.
NTC temperature sensor inside.

SNEC第十七届(2024)国际太阳能光伏与智慧能源(上海)大会暨展览会（简称“SNEC”）将于2024年6月13-15日在国家会展中心

一年一度的PCIM Europe将于6月11日至13日.在德国纽伦堡会展中心盛大举行.作为PCIM Europe的常客，瑞能半导体今年再度参展，届时我们会携瑞能的最新产品组合与应用方案亮相Hall 9-538展台，期待您的

Planar passivated SCR with sensitive gate in surface mountable SOT23 (TO-236AB) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated SCR with sensitive gate in surface mountable SOT23 (TO-236AB) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance